About this role

We are seeking great talent to help us build The DNA of tech.®

Vishay manufactures one of the world's largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. We help the world's most in-demand technologies come to life. Every day our products touch your life and the lives of people across the world, though you likely do not know it. Come join us and help us build The DNA of tech.™

Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH).  Learn more at www.Vishay.com.

Do you want to help us build the DNA of tech.?  Vishay General Semiconductor Taiwan Ltd is currently seeking applicants for a  Sr. Chief Engineer I, R&D (SIC Power MOSFET Group)

Job Location:

Vishay General Semiconductor Taiwan, Ltd is the headquarter of Diodes Division, one of the world's leading manufacturers of discrete semiconductors--Diodes, Rectifiers and TVS. We are one of the earliest foreign electronic companies established in Taiwan. We provide you with responsible and ethical leadership and encourage open communication with our employees, governmental agencies, suppliers, contractors and industry groups. We are located in the heart of Xindian District, New Taipei City, where the public transportation and living functions are quite convenient, just 10 minutes walking distance from Qizhang MRT Station and Yulong City Mall.

What you will be doing:

  • Work on the SiC Power MOSFET Planar/Trench product
  • Developing new products/DOE to meet design target.
  • To supports all the detailed reliability of FA analyses during new product development
  • To benchmark the device performance between our company and competitors.
  • Work with global SiC MOSFET team to plan and execute product development and related activities
  • To solve new product quality issue and meet automotive/industrial qualification.

What you will bring along:

  • Master's degree or above in Engineering/Physic/Material
  • Minimum 5 years of experience in R&D jobs preferably from semiconductor industry
  • Familiar with wafer Fab process or SiC Diode/MOS process prefer.
  • Familiar with Device Reliability failure analysis prefer.
  • Good English speaking ability

 What can we offer you for your talent:

Vishay offers a comprehensive suite of benefit programs including health care coverage, financial support programs and other resources designed to help you achieve your personal and professional goals. With us, you'll experience unique career paths, an open and collaborative culture, a stable business that will be there for you, and opportunities to work globally and locally.

Do you have the skills we need? Are you ready to power your career as you power the world? If so, apply today.

Vishay be committed to a workplace free of harassment and unlawful discrimination. We do not engage in discrimination or harassment based on sex, race, color, religion, national origin, disability, protected veteran status, age, or any other characteristic protected by law in hiring and employment practices.

Frequently Asked Questions

Is the salary disclosed for the Sr. Chief Engineer I, R&D position at vishay?
The salary for this Sr. Chief Engineer I, R&D role at vishay is not publicly listed. Click "Apply Now" to learn more about the compensation package on their official careers page.
Where is the Sr. Chief Engineer I, R&D position at vishay located?
This Sr. Chief Engineer I, R&D role at vishay is based in Kaohsiung Diodes, TW, Kaohsiung Mosfets, TW, Kaohsiung, TW, Taipei Diodes, TW, Taipei Mosfets, TW, Taipei Opto, TW, Taipei, TW. The position is listed as on-site or hybrid. Check the full job description or apply directly to confirm the work arrangement.
Is the Sr. Chief Engineer I, R&D role at vishay full-time or part-time?
This is listed as a Full time position. It is posted as a Sr. Chief Engineer I, R&D role in the AS020 Vishay General Semiconductor Taiwan, Ltd. department at vishay.
Which team or department does the Sr. Chief Engineer I, R&D at vishay belong to?
This Sr. Chief Engineer I, R&D position is part of the AS020 Vishay General Semiconductor Taiwan, Ltd. department at vishay. See the full job description for more information about the team structure and responsibilities.
How do I apply for the Sr. Chief Engineer I, R&D position at vishay?
Click the "Apply Now" button on this page. You will be redirected to vishay's official application portal hosted on workday where you can submit your application directly.
When was the Sr. Chief Engineer I, R&D job at vishay posted?
This Sr. Chief Engineer I, R&D position at vishay was posted on Jul 15, 2026. Apply as soon as possible — early applications are often reviewed first.
Sr. Chief Engineer I, R&D
vishay
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